| PART |
Description |
Maker |
| SLD-1000 |
4 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2953 TGF2953-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MRF9745T1 |
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
Motorola, Inc
|
| PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
